Saurabh Mookerjea

Title: Saurabh Mookerjea: Innovator in Memory Device Technology

Introduction

Saurabh Mookerjea is a notable inventor based in Hillsboro, OR (US). He has made significant contributions to the field of memory devices, particularly through his innovative patent. His work focuses on enhancing the efficiency and functionality of memory technology.

Latest Patents

Saurabh Mookerjea holds a patent for a TFET based 6T SRAM cell. This invention provides memory devices and methods of operation that include first and second cross-coupled inverters and first and second access transistors coupled to an input node of the second inverter. The memory device features a control circuit that provides a first reference voltage at a first ground node of the first inverter and a second reference voltage at a second ground node of the second inverter. The first access transistor is designed to conduct current from a first bit line to the input node while ensuring minimal current conduction from the input node to the first bit line. Similarly, the second access transistor is configured to conduct current from the input node to either the first bit line or a second bit line, while also providing minimal current conduction from the input node to the selected bit line. This innovative approach enhances the performance of memory devices.

Career Highlights

Saurabh Mookerjea is associated with the Penn State Research Foundation, where he continues to advance his research and development in memory technology. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

He collaborates with esteemed colleagues such as Jawar Singh and Ramakrishnan Krishnan, contributing to a dynamic research environment that fosters innovation and creativity.

Conclusion

Saurabh Mookerjea's contributions to memory device technology through his patent demonstrate his commitment to innovation in the field. His work not only enhances the functionality of memory devices but also paves the way for future advancements in technology.