The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Oct. 27, 2010
Jawar Singh, University Park, PA (US);
Ramakrishnan Krishnan, Hsinchu, TW;
Saurabh Mookerjea, Hillsboro, OR (US);
Suman Datta, Port Matilda, PA (US);
Vijaykrishnan Narayanan, State College, PA (US);
Jawar Singh, University Park, PA (US);
Ramakrishnan Krishnan, Hsinchu, TW;
Saurabh Mookerjea, Hillsboro, OR (US);
Suman Datta, Port Matilda, PA (US);
Vijaykrishnan Narayanan, State College, PA (US);
The Penn State Research Foundation, University Park, PA (US);
Abstract
Memory devices and methods of operation are provided. A memory device includes first and second cross-coupled inverters and first and second access transistors coupled to an input node of the second inverter. The memory device also includes a control circuit for providing a first reference voltage at a first ground node of the first inverter and a second reference voltage at a second ground node of the second inverter. The first access transistor is configured to conduct current from a first bit line to the input node and to provide substantially no current conduction from the input node to the first bit line. The second access transistor is configured to conduct current from the input node to one of the first bit line and a second bit line and to provide substantially no current conduction from the input node to the one of first and second bit lines.