Gunma-ken, Japan

Satoshi Suzuki


Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 2000-2002

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2 patents (USPTO):Explore Patents

Title: Satoshi Suzuki: Innovator in Silicon Crystal Technology

Introduction

Satoshi Suzuki is a prominent inventor based in Gunma-ken, Japan. He has made significant contributions to the field of silicon crystal technology, holding 2 patents that focus on improving the quality of silicon single crystal wafers. His work is essential for advancements in semiconductor manufacturing.

Latest Patents

Suzuki's latest patents include methods for producing silicon single crystal wafers with minimal crystal defects. One of his notable inventions describes a process in accordance with the Czochralski method, where the single crystal is grown in specific regions to ensure that neither FPDs nor L/D defects exist on the wafer surface. This method enhances the gettering capability stemming from oxygen precipitation across the entire wafer surface, making it a valuable advancement in the industry.

Career Highlights

Satoshi Suzuki is associated with Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His innovative approaches have positioned him as a key figure in the development of high-quality silicon wafers, which are critical for various electronic applications.

Collaborations

Throughout his career, Suzuki has collaborated with notable coworkers such as Makoto Iida and Eiichi Iino. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

Satoshi Suzuki's work in silicon crystal technology exemplifies the importance of innovation in the semiconductor industry. His patents not only enhance the quality of silicon wafers but also pave the way for future advancements in electronics.

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