Toyama, Japan

Satoshi Sibata

This inventor holds 1 USPTO granted patent. Top assignee: Panasonic Corporation. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoshi Sibata. Retrieved from https://idiyas.com/inventor/satoshi-sibata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Satoshi Sibata: Innovator in Semiconductor Device Manufacturing

Introduction

Satoshi Sibata is a notable inventor based in Toyama, Japan. He has made significant contributions to the field of semiconductor device manufacturing. His innovative approaches have led to advancements in the evaluation of resin films, which are crucial in the semiconductor industry.

Latest Patents

Sibata holds a patent for a "Resin film evaluation method and method for manufacturing a semiconductor device." This patent outlines a process where a substrate with a resin film is irradiated with charged energetic particles. The method involves measuring the surface potentials of the substrate and predicting physical quantities such as resin film residue count based on the difference in surface potential. This technique allows for a simple and highly accurate evaluation of the degenerated layer formed on the resin film surface.

Career Highlights

Satoshi Sibata is associated with Panasonic Corporation, where he has been instrumental in developing innovative technologies. His work focuses on enhancing the manufacturing processes of semiconductor devices, contributing to the efficiency and effectiveness of production methods.

Collaborations

Sibata has collaborated with notable colleagues, including Reiki Kaneki and Hisako Kamiyanagi. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Satoshi Sibata's contributions to the semiconductor industry through his patented methods demonstrate his expertise and commitment to innovation. His work continues to influence the field, paving the way for future advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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