The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Nov. 28, 2007
Hisako Kamiyanagi, Toyama, JP;
Satoshi Sibata, Toyama, JP;
Reiki Kaneki, Toyama, JP;
Kohei Miyagawa, Toyama, JP;
Hisako Kamiyanagi, Toyama, JP;
Satoshi Sibata, Toyama, JP;
Reiki Kaneki, Toyama, JP;
Kohei Miyagawa, Toyama, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In the resin film evaluation method and method for manufacturing a semiconductor device applying the resin film evaluation method of the present invention, first, a substrate having a resin film formed on an insulating film with an opening in which the surface of the insulating film is exposed is irradiated with charged energetic particles. Then, the surface potentials of the substrate surface irradiated with charged energetic particles are measured. Based on the measurements, the difference in surface potential between the resin film and the insulating film exposed in the opening is obtained. Based on the difference in surface potential, a physical quantity such as the resin film residue count obtained after a given treatment is predicted. In this way, the degenerated layer formed on the surface of a resin film due to charged energetic particles such as implantation ions can be evaluated in a simple and highly accurate manner.