Yokkaichi, Japan

Satoshi Sakashita

This inventor holds 23 USPTO granted patents and 2 published patent applications and 14 EPO patents, primarily in Honeycomb Structure Technology. Top assignee: Ngk Insulators, Inc.. Active years: 2009-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoshi Sakashita. Retrieved from https://idiyas.com/inventor/satoshi-sakashita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 91.3

 

Average Co-Inventor Count = 2.7

ph-index = 5

Forward Citations = 54(Granted Patents)


Location History:

  • Nagoya, JP (2009 - 2019)
  • Yokkaichi, JP (2013 - 2021)

Company Filing History:


Years Active: 2009-2021

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Areas of Expertise:
Porous Body
Honeycomb Filter
Microstructure Analysis
Pressure Loss
Manufacturing Method
Thermal Shock Resistance
Honeycomb Catalyst
Ceramic Membrane
Measurement Device
Filter Element
Analysis Apparatus
Holding Jig
23 patents (USPTO):Explore Patents

Title: Innovations by Satoshi Sakashita: Pioneering Porous Body Production

Introduction

Satoshi Sakashita, a prominent inventor based in Yokkaichi, Japan, has made significant contributions to the field of ceramics and materials engineering, holding an impressive total of 23 patents. His innovative work focuses primarily on the production and analysis of porous body structures, which have applications in various industries, including filtration and microstructure analysis.

Latest Patents

Among Satoshi Sakashita's latest patents, two stand out for their ingenuity and applicability. The first patent details a **method for producing a porous body**, which involves a meticulous process starting with a raw-material mixing step. This step combines talc with an average particle size ranging from 1 micrometer to 18 micrometers, alumina, and auxiliary raw materials that undergo a eutectic reaction with talc, ensuring a precise weight ratio. Following this, the method includes molding and firing the green body at temperatures between 1350°C and 1440°C, resulting in a compact and highly efficient porous structure.

The second patent pertains to a **microstructure analysis method** for porous bodies, which utilizes a specific surface layer thickness (Ts) derived from thorough three-dimensional scanning. This analysis is crucial in understanding the porosity of the body and its microstructural characteristics, enhancing the development of advanced materials for various applications.

Career Highlights

Satoshi Sakashita is currently employed at NGK Insulators, Inc., where he continues to push the boundaries of materials science. His deep understanding of porous structures has not only led to numerous patents but has also positioned him as a key figure in research and development within the organization. His work emphasizes the importance of innovative approaches to traditional materials, thus advancing both industrial practices and academic understanding.

Collaborations

Satoshi's innovative journey is complemented by collaborations with esteemed colleagues, such as Hiroyuki Nagaoka and Shingo Sokawa. Together, they explore the intricate properties of materials, fostering an environment enriched with diverse expertise and ideas. These collaborations not only enhance the quality of their inventions but also pave the way for multi-disciplinary innovations in the industry.

Conclusion

In summary, Satoshi Sakashita's impactful work in the field of porous body production and analysis showcases his commitment to innovation and excellence. His contributions, marked by numerous patents and fruitful collaborations, continue to influence both academic and industrial spheres, highlighting the significance of inventive minds in shaping the future of materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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