Amimachi, Japan

Satoshi Nakayama

This inventor holds 1 USPTO granted patent. Top assignee: Texas Instruments Corporation. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoshi Nakayama. Retrieved from https://idiyas.com/inventor/satoshi-nakayama-bo2ugt6f

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Satoshi Nakayama: Innovator in Semiconductor Technology

Introduction

Satoshi Nakayama is a prominent inventor based in Amimachi, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the design of memory cells. His innovative approach has led to advancements that enhance data retention stability while minimizing layout area.

Latest Patents

Satoshi Nakayama holds 1 patent for his invention titled "Semiconductor memory cell and semiconductor memory device." The objective of this invention is to reduce the layout area while guaranteeing data retention stability in a static type semiconductor memory cell. This SRAM cell is constituted with two MOS transistors and one inverter circuit. The source terminal of the PMOS transistor is connected to the bit line (BL), the drain terminal is connected to the data storage node (Na), and the gate terminal is connected to the word line (WL). The source terminal of the NMOS transistor is connected to a supply voltage terminal that provides low-level reference potential V (for example, zero volts). The drain terminal is connected to the data storage node (Na), and the gate terminal is connected to the output terminal of the inverter circuit. The input terminal of the inverter circuit is connected to the data storage node (Na).

Career Highlights

Satoshi Nakayama is currently employed at Texas Instruments Corporation, where he continues to work on innovative semiconductor solutions. His expertise in memory cell design has positioned him as a valuable asset in the field of electronics.

Collaborations

Some of his notable coworkers include Kohsuke Ikeda and Yasuhito Ichimura. Their collaborative efforts contribute to the advancement of semiconductor technologies and innovations.

Conclusion

Satoshi Nakayama's work in semiconductor memory technology exemplifies the impact of innovation in electronics. His contributions continue to shape the future of memory devices, ensuring enhanced performance and reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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