Mie, Japan

Satoshi Mashima

This inventor holds 1 USPTO granted patent. Top assignees: Agency of Industrial Science and Technology, Central Glass Company, Limited. Active years: 1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoshi Mashima. Retrieved from https://idiyas.com/inventor/satoshi-mashima

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: Satoshi Mashima: Innovator in Amorphous Silicon Technology

Introduction

Satoshi Mashima is a notable inventor based in Mie, Japan. He has made significant contributions to the field of materials science, particularly in the development of methods for forming thin films of amorphous silicon. His innovative approach has implications for various applications in electronics and photovoltaics.

Latest Patents

Satoshi Mashima holds a patent for a "Method of forming thin film of amorphous silicon by plasma CVD." This invention relates to a plasma chemical vapor deposition (CVD) method for depositing a thin film of amorphous silicon or an amorphous silicon alloy on a substrate. The process involves glow discharge decomposition of a raw material gas, such as silane gas. Notably, the degradation of the photoconductivity of the obtained amorphous silicon film due to light irradiation is suppressed by mixing xenon gas with the raw material gas. The optimal volume ratio of xenon gas to the raw material gas is maintained at no less than 1 and preferably not more than 30. This method not only enhances the quality of the silicon film but also reduces material costs by mixing specific ratios of gases.

Career Highlights

Throughout his career, Satoshi Mashima has worked with prominent organizations, including Central Glass Company, Limited and the Agency of Industrial Science and Technology. His experience in these institutions has allowed him to refine his expertise in materials science and contribute to advancements in thin film technology.

Collaborations

Satoshi has collaborated with notable colleagues such as Akihisa Matsuda and Makoto Toda. Their joint efforts have furthered research and development in the field of amorphous silicon and its applications.

Conclusion

Satoshi Mashima's innovative work in the field of amorphous silicon technology has led to significant advancements in the deposition methods of thin films. His contributions continue to influence the industry and pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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