The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1993
Filed:
Nov. 26, 1991
Akihisa Matsuda, Ibaraki, JP;
Satoshi Mashima, Mie, JP;
Makoto Toda, Mie, JP;
Kouji Fujita, Mie, JP;
Central Glass Company, Limited, Ube City, JP;
Agency of Industrial Science and Technology, Tokyo, JP;
Abstract
The invention relates to a plasma CVD method for the deposition of a thin film of amorphous silicon, or an amorphous silicon alloy, on a substrate by glow discharge decomposition of a raw material gas such as silane gas. The degradation of the photoconductivity of the obtained amorphous silicon film by irradiation with light is suppressed by mixing xenon gas with the raw material gas such that at the entrance to the reaction chamber the volume ratio of xenon gas to the raw material gas is not less than 1 and, preferably, not more than 30. A nearly comparable effect can be gained, and the material cost can be reduced, by mixing 1 part by volume of the raw material gas with 0.05 to 1 part of xenon gas and 5 to 30 parts of hydrogen gas.