Yokohama, Japan

Satoshi Inada

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoshi Inada. Retrieved from https://idiyas.com/inventor/satoshi-inada-sl9k3edb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:

goldMedal1 out of 834,513 
Other
 patents

Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Satoshi Inada: Innovator in Magnetoresistive Technology

Introduction

Satoshi Inada is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of magnetoresistive elements, showcasing his expertise through his innovative patent.

Latest Patents

Satoshi Inada holds a patent for a "Method of manufacturing magnetoresistive element." This patent outlines a detailed process that includes forming multiple layers of magnetic and non-magnetic materials. The method involves patterning these layers using reactive ion etching (RIE) with a specific etching gas mixture, which includes a noble gas and nitrogen gas. This innovative approach enhances the manufacturing process of magnetoresistive elements.

Career Highlights

Throughout his career, Satoshi Inada has focused on advancing technologies related to magnetoresistive elements. His work has contributed to the development of more efficient and effective manufacturing methods in this specialized field.

Collaborations

Satoshi has collaborated with notable colleagues, including Kazuhiro Tomioka and Masatoshi Yoshikawa. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Satoshi Inada's contributions to the field of magnetoresistive technology highlight his role as an influential inventor. His patent demonstrates a commitment to advancing manufacturing techniques, which can have a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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