This inventor holds 1 USPTO granted patent. Top assignee: Toagosei Company, Ltd.. Active years: 2009.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2009
Title: Satoshi Hattori: Innovator in Silicon Oxide Film Production
Introduction
Satoshi Hattori is a notable inventor based in Nagoya, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the production of silicon oxide films. His innovative methods aim to enhance the quality of these films while maintaining low production temperatures.
Latest Patents
Hattori holds a patent for a "Method for producing silicon oxide film." This invention addresses the need for a silicon oxide film that surpasses the quality of traditional TEOS films at lower temperatures. The method involves a chemical vapor deposition (CVD) process where a silane compound is reacted to produce the desired insulating film.
Career Highlights
Satoshi Hattori has dedicated his career to advancing semiconductor technology. His work has led to improved manufacturing processes that benefit the electronics industry. With a focus on quality and efficiency, Hattori's contributions are recognized within the field.
Collaborations
Hattori has collaborated with esteemed colleagues, including Katsuyoshi Harada and Hiroaki Takeuchi. Their combined expertise has fostered innovation and development in semiconductor manufacturing techniques.
Conclusion
Satoshi Hattori's work in the production of silicon oxide films exemplifies the impact of innovative thinking in technology. His patent and collaborations highlight the importance of quality in semiconductor manufacturing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile