The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Feb. 17, 2005
Hiroaki Takeuchi, Nagoya, JP;
Satoshi Hattori, Nagoya, JP;
Hiroshi Suzuki, Nagoya, JP;
Katsuyoshi Harada, Nagoya, JP;
Hiroaki Takeuchi, Nagoya, JP;
Satoshi Hattori, Nagoya, JP;
Hiroshi Suzuki, Nagoya, JP;
Katsuyoshi Harada, Nagoya, JP;
Toagosei Co., Ltd., Tokyo, JP;
Abstract
[Problems] It is to provide a method for producing a silicon oxide film having better quality than a TEOS at low temperature. And it is to provide a method for manufacturing a semiconductor device wherein an insulating film composed of a silicon oxide is formed. [Means for solving problems] A film composed of a silicon oxide is produced by CVD method where a silane compound represented by the following general formula is reacted. An insulating film is deposited by CVD method where a silane compound represented by the following general formula is reacted.HSi(OR)(In the above formula, R is an alkyl group of carbon number from 1 to 5, and n is an integer from 0 to 2.)