Osaka, Japan

Satoko Nakaoka


Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2000-2001

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2 patents (USPTO):Explore Patents

Title: **Innovative Contributions of Satoko Nakaoka in Semiconductor Technology**

Introduction

Satoko Nakaoka, based in Osaka, Japan, is an accomplished inventor known for her significant contributions to the field of semiconductor technology. With two patents to her name, she has made remarkable advancements that enhance the functionality and performance of semiconductor substrates.

Latest Patents

Nakaoka's latest innovations include a method for pattern formation and a surface treating agent. This method involves applying isopropenoxytrimethylsilane to a semiconductor substrate made of silicon. This application renders the surface hydrophobic, thereby increasing adhesion. In this process, the trimethylsilyl group substitutes the hydrogen atom of an OH group on the substrate surface, leading to the formation of acetone. Following this treatment, a chemically amplified resist is applied, exposed to light, and developed to form precise patterns. Notably, this surface treating agent avoids ammonia generation, allowing for excellent pattern configuration without the formation of an insoluble skin layer, marking a significant advance in semiconductor manufacturing.

Career Highlights

Throughout her career, Satoko Nakaoka has made her mark by working with prestigious companies like Matsushita Electric Industrial Co., Ltd. Her dedication to innovation has paved the way for new methodologies and materials in semiconductor design and application.

Collaborations

During her career, she has collaborated with notable figures in the industry, including Masayuki Endo and Hiromi Ohsaki. Their collaborative efforts have been instrumental in driving forward research and development in semiconductor technology.

Conclusion

In summary, Satoko Nakaoka exemplifies the spirit of innovation within the semiconductor industry. Her patents reflect significant advancements that enhance semiconductor performance and manufacturing processes. As technology continues to evolve, her contributions will undoubtedly leave a lasting impact on the field.

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