The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2001

Filed:

Aug. 01, 1996
Applicant:
Inventors:

Satoko Nakaoka, Osaka, JP;

Masayuki Endo, Osaka, JP;

Hiromi Ohsaki, Niigata, JP;

Akiko Katsuyama, Osaka, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07E 7/08 ;
U.S. Cl.
CPC ...
C07E 7/08 ;
Abstract

To the surface of a semiconductor substrate made of silicon, isopropenoxytrimethylsilane is supplied as a surface treating agent to render the surface of the semiconductor substrate hydrophobic and increase adhesion to the semiconductor substrate. Thus, Si(CH,),(trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate, resulting in (CH,),CO (acetone). Subsequently, a chemically amplified resist is applied to the surface of the semiconductor substrate and exposed to light by using a desired mask, followed sequentially by PEB and development for forming a pattern. Since the surface treating agent does not generate ammonia, there can be formed a pattern in excellent configuration with no insoluble skin layer formed thereon.


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