Fremont, CA, United States of America

Sathya Mani

This inventor holds 1 USPTO granted patent. Top assignee: Lam Research Corporation. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sathya Mani. Retrieved from https://idiyas.com/inventor/sathya-mani

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Sathya Mani

Introduction

Sathya Mani is a notable inventor based in Fremont, CA, who has made significant contributions to the field of semiconductor processing. With a focus on enhancing the efficiency and longevity of semiconductor components, her work has garnered attention in the industry.

Latest Patents

Sathya Mani holds a patent for a "Hot edge ring with sloped upper surface." This innovative design features an annular body with a sloped upper surface that extends the lifetime of the hot edge ring. The patent describes a step that underlies the outer edge of a semiconductor substrate, which is supported in a plasma processing chamber. The vertical surface surrounding the substrate's outer edge, along with the sloped upper surface, plays a crucial role in the plasma processing of the substrate.

Career Highlights

Sathya Mani is currently employed at Lam Research Corporation, a leading company in the semiconductor equipment industry. Her work at Lam Research has positioned her as a key player in advancing semiconductor technology.

Collaborations

Throughout her career, Sathya has collaborated with esteemed colleagues, including Akira Koshiishi and Gautam Bhattacharyya. These collaborations have further enriched her contributions to the field.

Conclusion

Sathya Mani's innovative work in semiconductor processing, particularly her patented hot edge ring design, showcases her commitment to enhancing technology in the industry. Her contributions continue to influence advancements in semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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