This inventor holds 1 USPTO granted patent. Top assignee: Rensselaer Polytechnic Institute. Active years: 2006.
Company Filing History:
Years Active: 2006
Title: Santhosh Balachandran: Innovator in Semiconductor Technology
Introduction
Santhosh Balachandran is a notable inventor based in Troy, NY (US). He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.
Latest Patents
Santhosh holds a patent for a "Semiconductor device having multiple-zone junction termination extension, and method for fabricating the same." This patent describes a semiconductor device that includes a graded junction termination extension. The method for fabricating this device involves providing a semiconductor layer with a pn junction, adjacent mask layer, and etching the mask layer to create laterally adjacent steps with different mask thicknesses. The process also includes implanting a dopant species into the semiconductor layer and annealing it to activate the dopant species, forming the graded junction termination extension. He has 1 patent to his name.
Career Highlights
Santhosh Balachandran is affiliated with Rensselaer Polytechnic Institute, where he continues to advance his research in semiconductor technology. His work has been instrumental in developing new methods and devices that push the boundaries of current technology.
Collaborations
Santhosh has collaborated with esteemed colleagues such as Peter Almem Losee and Tat-Sing Chow. Their combined expertise has contributed to the success of various projects and innovations in the semiconductor field.
Conclusion
Santhosh Balachandran is a prominent figure in semiconductor innovation, with a focus on enhancing device performance through his patented technologies. His contributions continue to impact the industry positively.