The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Sep. 24, 2004
Tat-sing Paul Chow, Niskayuna, NY (US);
Peter Losee, Clifton Park, NY (US);
Santhosh Balachandran, Troy, NY (US);
Tat-Sing Paul Chow, Niskayuna, NY (US);
Peter Losee, Clifton Park, NY (US);
Santhosh Balachandran, Troy, NY (US);
Rensselaer Polytechnic Institute, Troy, NY (US);
Abstract
A semiconductor device includes a graded junction termination extension. A method for fabricating the device includes providing a semiconductor layer having a pn junction, providing a mask layer adjacent to the semiconductor layer, etching the mask layer to form at least two laterally adjacent steps associated with different mask thicknesses and substantially planar step surfaces, and implanting a dopant species through the mask layer into a portion of the semiconductor layer adjacent to the termination of the pn junction. The semiconductor layer is annealed to activate at least a portion of the implanted dopant species to form the graded junction termination extension.