This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2025.
Company Filing History:
Years Active: 2025
Title: The Innovative Contributions of Sanshan Jiao
Introduction
Sanshan Jiao is a notable inventor based in Wuhan, China. He has made significant contributions to the field of memory devices, showcasing his expertise through his innovative patents. His work is particularly relevant in the context of advancing memory technology.
Latest Patents
Sanshan Jiao holds a patent titled "Method for recovery in read operation of memory device and memory device thereof." This patent describes a memory device that includes an array of memory cells, word lines coupled to the rows of these cells, and a peripheral circuit designed to read a selected row of memory cells. The peripheral circuit features a word line driver that applies a pass voltage to an unselected word line and discharges it to a recovery voltage that exceeds the supply voltage of the memory array. This innovation enhances the efficiency and reliability of memory operations.
Career Highlights
Sanshan Jiao is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of memory technology. His work has been instrumental in developing advanced memory solutions that meet the growing demands of modern computing.
Collaborations
He collaborates with talented coworkers, including Ling Chu and Shuang Liu, who contribute to the innovative environment at Yangtze Memory Technologies Co., Ltd. Their combined efforts foster a culture of creativity and technological advancement.
Conclusion
Sanshan Jiao's contributions to memory device technology exemplify the impact of innovative thinking in the field. His patent and ongoing work at Yangtze Memory Technologies Co., Ltd. highlight the importance of advancements in memory technology for future developments.