Gunpo, South Korea

Sanghyeon Park

This inventor holds 1 USPTO granted patent. Top assignee: Sungkyunkwan University. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sanghyeon Park. Retrieved from https://idiyas.com/inventor/sanghyeon-park-xyblhahn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Sanghyeon Park: Innovator in Polishing Slurry Technology.

Introduction

Sanghyeon Park is a notable inventor based in Gunpo-si, South Korea. He has made significant contributions to the field of polishing technology, particularly through his innovative methods for preparing polishing slurries.

Latest Patents

Sanghyeon Park holds a patent for a "Method for preparing polishing slurry and polishing method using same." This patent describes a process that includes preparing a solution containing abrasive particles and a fluid, passing the solution through a porous membrane filter region, and ultimately preparing a polishing slurry by removing the fluid from the solution that has passed through the region. Notably, the method employs a tangential flow filtration technique to remove abrasive particles with a mean particle size of 100 nm or less.

Career Highlights

Sanghyeon Park is affiliated with Sungkyunkwan University, where he continues to advance research in polishing technologies. His work has garnered attention for its practical applications in various industries.

Collaborations

He collaborates with esteemed colleagues, including Taesung Kim and Seokjun Hong, contributing to a dynamic research environment.

Conclusion

Sanghyeon Park's innovative approach to polishing slurry technology exemplifies the impact of research and development in enhancing industrial processes. His contributions are paving the way for advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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