Hwaseong, South Korea

SangHwan Park

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: SangHwan Park. Retrieved from https://idiyas.com/inventor/sanghwan-park-ckmt2wb2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 79(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: **SangHwan Park: Innovator in Magnetic Memory Devices**

Introduction

SangHwan Park, an accomplished inventor based in Hwaseong-si, South Korea, is recognized for his innovative contributions in the field of magnetic memory technologies. With one notable patent to his name, Park continues to push the boundaries of what is possible in memory device technology.

Latest Patents

SangHwan Park's patent, titled "Magnetic memory device having perpendicular magnetic tunnel junction pattern and method of forming the same," presents a groundbreaking approach to memory device design. The invention encompasses a magnetic memory device featuring a pinned pattern that integrates a coupling enhancement pattern, polarization enhancement pattern, and a texture-blocking pattern situated between the coupling and polarization enhancement patterns. Additionally, a free pattern is located on the polarization enhancement pattern, with a tunnel barrier positioned between the pinned and free patterns. This innovative design aims to enhance magnetic memory efficiency and performance.

Career Highlights

SangHwan Park is currently associated with Samsung Electronics Co., Ltd., where he contributes his expertise in advancing magnetic memory technologies. His experience and knowledge play a crucial role in shaping the company's innovative product offerings in memory solutions.

Collaborations

In the pursuit of technological advancement, SangHwan Park collaborates with fellow innovators and researchers, including colleagues Keewon Kim and Jaehoon Kim. Together, they foster an environment of creativity and innovation that drives the development of next-generation memory devices.

Conclusion

As an inventor, SangHwan Park exemplifies the spirit of innovation within the technology sector. His significant contributions, particularly in the realm of magnetic memory devices, mark him as a notable figure at Samsung Electronics Co., Ltd. With his collaborative efforts and dedication to technological advancement, Park is undoubtedly paving the way for future innovations in memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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