The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 07, 2016

Filed:

Apr. 14, 2015
Applicants:

Keewon Kim, Suwon-si, KR;

Sanghwan Park, Hwaseong-si, KR;

Jaehoon Kim, Seoul, KR;

Inventors:

KeeWon Kim, Suwon-si, KR;

SangHwan Park, Hwaseong-si, KR;

JaeHoon Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/02 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01);
Abstract

Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a pinned pattern including a coupling enhancement pattern, a polarization enhancement pattern, and a texture blocking pattern located between the coupling enhancement pattern and the polarization enhancement pattern, a free pattern located on the polarization enhancement pattern of the pinned pattern, and a tunnel barrier located between the pinned pattern and the free pattern. The coupling enhancement pattern includes a first enhancement magnetic pattern, a second enhancement magnetic pattern, and a first enhancement non-magnetic pattern located between the first enhancement magnetic pattern and the second enhancement magnetic pattern.


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