Company Filing History:
Years Active: 2019
Title: Sangeneni Mohan: Innovator in Field Effect Transistors
Introduction
Sangeneni Mohan is a notable inventor based in Bengaluru, India. He has made significant contributions to the field of electronics, particularly in the development of advanced transistors. His innovative work has led to the creation of a unique patent that enhances the performance and efficiency of field effect transistors.
Latest Patents
Sangeneni Mohan holds a patent for a "Programmable Tunnel Thermionic Mode Transistor." This invention features a field effect transistor (FET) that includes a bottom gate electrode and a bottom gate dielectric. The design incorporates a channel layer that is placed on the bottom gate dielectric, along with a top portion that consists of a source electrode, a drain electrode, a top gate electrode, and a top dielectric layer. The channel layer is engineered to form Schottky barriers at the contact points with the source and drain electrodes. The innovative aspect of this FET is its ability to be programmed to operate in two modes: tunneling, which provides low power consumption, and thermionic mode, which offers high performance. Additionally, the FET can be programmed to combine both modes in a single operating cycle, achieving high performance while maintaining low power consumption. Sangeneni Mohan has 1 patent to his name.
Career Highlights
Sangeneni Mohan is affiliated with the Indian Institute of Science, where he conducts research and development in the field of electronics. His work has garnered attention for its potential applications in various technological advancements.
Collaborations
Some of his notable coworkers include Shubhadeep Bhattacharjee and Kolla Lakshmi Ganapathi. Their collaborative efforts contribute to the innovative research environment at the Indian Institute of Science.
Conclusion
Sangeneni Mohan's contributions to the field of field effect transistors exemplify the spirit of innovation in electronics. His patented work on the programmable tunnel thermionic mode transistor showcases his commitment to advancing technology while addressing power efficiency.