Stanford, CA, United States of America

SangBum Kim

This inventor holds 1 USPTO granted patent. Top assignee: Leland Stanford Junior University. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: SangBum Kim. Retrieved from https://idiyas.com/inventor/sangbum-kim-dsfl2mro

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: SangBum Kim: Innovator in Chalcogenide-Based Nanowire Memory

Introduction

SangBum Kim is a notable inventor based in Stanford, California. He has made significant contributions to the field of memory technology, particularly through his innovative work on chalcogenide-based nanowire memories. His research focuses on developing advanced methods and systems that enhance memory circuit manufacturing.

Latest Patents

SangBum Kim holds a patent for a "Method and system for chalcogenide-based nanowire memory." This invention involves implementing chalcogenide-based nanowire memories using various methods and devices. The patent describes a method of manufacturing a memory circuit that includes depositing nanoparticles at specific locations on a substrate. Chalcogenide-based nanowires are then created at these locations using a vapor-liquid-solid technique. Additionally, insulating material is deposited between the nanowires, and lines are created to connect at least some of the chalcogenide-based nanowires.

Career Highlights

SangBum Kim is affiliated with Leland Stanford Junior University, where he conducts his research and development work. His innovative approach to memory technology has positioned him as a key figure in the field.

Collaborations

Some of his notable coworkers include Hailin Peng and H S Philip Wong, who have collaborated with him on various research projects.

Conclusion

SangBum Kim's contributions to chalcogenide-based nanowire memory technology highlight his role as an influential inventor in the field. His innovative methods and systems continue to pave the way for advancements in memory circuit manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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