The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2008
Filed:
Sep. 29, 2006
H. S. Philip Wong, Stanford, CA (US);
Stefan Meister, Stanford, CA (US);
Sangbum Kim, Stanford, CA (US);
Hailin Peng, Stanford, CA (US);
Yuan Zhang, Stanford, CA (US);
Yi Cui, Sunnyvale, CA (US);
H. S. Philip Wong, Stanford, CA (US);
Stefan Meister, Stanford, CA (US);
SangBum Kim, Stanford, CA (US);
Hailin Peng, Stanford, CA (US);
Yuan Zhang, Stanford, CA (US);
Yi Cui, Sunnyvale, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
Chalcogenide-based nanowire memories are implemented using a variety of methods and devices. According to an example embodiment of the present invention, a method of manufacturing a memory circuit is implemented. The method includes depositing nanoparticles at locations on a substrate. Chalcogenide-based nanowires are created at the locations on the substrate using a vapor-liquid-solid technique. Insulating material is deposited between the chalcogenide-based nanowires. Lines are created to connect at least some of the chalcogenide-based nanowires.