Sang U Kim

Title: Innovations by Sang U Kim

Introduction

Sang U Kim is a notable inventor based in Essex Junction, VT (US). He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches.

Latest Patents

One of his latest patents is focused on forming Schottky barrier diodes by depositing aluminum silicon. This patent describes four distinct methods of forming copper and silicon doped aluminum conductive structures on the surface of the semiconductor body. When sintered, these structures will form Schottky diodes that are resistant to internal field emission characteristics created by co-incidental copper-aluminum precipitates and aluminum doped solid phase epitaxial growths. Another significant patent is for a self-aligned Schottky guard ring. This method allows for the formation of a self-aligned guard ring surrounding a Schottky barrier diode device without requiring an enlargement of the final Schottky barrier device. The process involves creating an overhanging opening in an insulator layer overlying a semiconductor body to expose the Schottky contact area on the surface. A diffusion barrier material, such as molybdenum, is deposited in the opening, allowing a guard ring to be formed from vapor diffusion around the deposited barrier material.

Career Highlights

Sang U Kim is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in the semiconductor field. His work has contributed to advancements in diode technology, enhancing the performance and reliability of semiconductor devices.

Collaborations

He has collaborated with notable coworkers, including Richard F Dreves and John F Fresia, who have also contributed to the field of semiconductor technology.

Conclusion

Sang U Kim's innovative patents and contributions to semiconductor technology highlight his role as a significant inventor in the industry. His work continues to influence advancements in the field, showcasing the importance of innovation in technology.