The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 1983
Filed:
Apr. 30, 1981
Applicant:
Inventor:
Sang U Kim, Essex Junction, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 29578 ; 29590 ; 148187 ; 357 67 ; 357 91 ; 427 84 ; 428620 ; 428641 ;
Abstract
This describes four distinct methods of forming copper and silicon doped aluminum conductive structures on the surface of the semiconductor body which when sintered will form in conjunction with the exposed surface of the silicon body Schottky diodes which are resistant to internal field emission characteristics created by co-incidental copper-aluminum precipitates and aluminum doped solid phase epitaxial growths.
Kim, Sang. (1983). Forming schottky barrier diodes by depositing aluminum silicon and (U.S. Patent No. 4373966). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4373966
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile