Icheon, South Korea

Sang-Hoon Park

This inventor holds 4 USPTO granted patents. Top assignee: Hynix Semiconductor Inc.. Active years: 2011-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang-Hoon Park. Retrieved from https://idiyas.com/inventor/sang-hoon-park-nc6klca4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 50.0

Average Co-Inventor Count = 4.4

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2011-2012

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4 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Sang-Hoon Park

Introduction

Sang-Hoon Park is a notable inventor based in Icheon-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on the fabrication methods of semiconductor devices, showcasing his expertise and innovative approach.

Latest Patents

Among his latest patents is a method of fabricating a semiconductor device on a substrate that includes a plurality of pillar patterns. This method involves creating an impurity region between adjacent pillar patterns and forming a gate electrode on each pillar pattern. A first capping layer covers the gate electrode, while a separation layer is placed between the gate electrodes of adjacent pillar patterns. The first capping layer is selectively removed, and a sacrificial layer is formed to cover the gate electrode. A second capping layer is then created on the sidewalls of each pillar pattern, leading to the formation of a word line that connects the gate electrodes of adjacent pillar patterns. This innovative design ensures that the first capping layer isolates the impurity region from the word line, while the second capping layer protects the sidewalls of the respective pillar patterns from exposure.

Another significant patent involves a method of fabricating a semiconductor device on a substrate with a pillar pattern. In this method, a gate electrode is formed on the pillar pattern without etching it. A conductive pattern is filled between adjacent pillar patterns, and a spacer is formed above the conductive pattern, surrounding the sidewalls of each pillar pattern. The gate electrode is then created by etching the conductive pattern using the spacer as an etch barrier. This approach highlights Sang-Hoon Park's innovative techniques in semiconductor fabrication.

Career Highlights

Sang-Hoon Park is currently employed at Hynix Semiconductor Inc., where he continues to push the boundaries of semiconductor technology. His work has not only contributed to the advancement of the industry but has also positioned him as a key figure in the field.

Collaborations

Throughout his career, Sang-Hoon Park has collaborated with talented individuals such as Yun-Seok Cho and Sang-Hoon Cho. These collaborations have fostered an environment of innovation and creativity, leading to groundbreaking advancements in semiconductor technology.

Conclusion

Sang-Hoon Park's contributions to semiconductor technology through his innovative patents and collaborations have made a significant impact in the field. His

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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