The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8053313 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 08, 2011

Filed:

Dec. 23, 2008
Applicants:

Yun-seok Cho, Icheon-si, KR;

Sang-hoon Park, Icheon-si, KR;

Young-kyun Jung, Icheon-si, KR;

Chun-hee Lee, Icheon-si, KR;

Inventors:

Yun-Seok Cho, Icheon-si, KR;

Sang-Hoon Park, Icheon-si, KR;

Young-Kyun Jung, Icheon-si, KR;

Chun-Hee Lee, Icheon-si, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a method of fabricating a semiconductor device on a substrate having a pillar pattern, a gate electrode is formed on the pillar pattern without etching the latter. A conductive pattern is filled between adjacent pillar patterns, a spacer is formed above the conductive pattern and surrounding sidewalls of each pillar pattern, and the gate electrode is formed by etching the conductive pattern using the spacer as an etch barrier.


Find Patent Forward Citations

Cho, Yun-Seok. (2011). Semiconductor device and method of fabricating the same (U.S. Patent No. 8053313). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8053313

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