Suwon-si, South Korea

Sang Hee Lee

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang Hee Lee. Retrieved from https://idiyas.com/inventor/sang-hee-lee-3dnl4wdb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Sang Hee Lee and Semiconductor Device Innovation.

Introduction

Sang Hee Lee is an inventor based in Suwon-si, South Korea, and is associated with Samsung Electronics Ltd. His listed patent concerns semiconductor device architecture, specifically a multi-bridge channel field-effect transistor.

Latest Patents

Lee is credited with 1 patent: “Semiconductor Device That Includes a Multi-Bridge Channel Field Effect Transistor.” The patent describes a device with first and second active patterns, a gate electrode, source and drain regions, and contacts connected to those regions. It also includes a lower wiring layer and a through via that connects the wiring layer to a contact. Together, these elements define an integrated structure for a semiconductor device.

Career Highlights

The available information identifies Lee’s work with Samsung Electronics Ltd. and highlights his contribution to semiconductor device design through the listed patent. The invention focuses on transistor structure and electrical connections within the device.

Collaborations

Lee’s listed coworker is Jong Min Shin. The provided information does not specify the nature or extent of their collaboration.

Conclusion

Sang Hee Lee’s listed patent reflects work on multi-bridge channel transistor architecture and semiconductor device integration.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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