Yongin, South Korea

Sang-Hak Yeo

This inventor holds 1 USPTO granted patent. Top assignee: Tes Co., Ltd. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang-Hak Yeo. Retrieved from https://idiyas.com/inventor/sang-hak-yeo-12f22vdx

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Sang-Hak Yeo

Introduction

Sang-Hak Yeo is a notable inventor based in Yongin-si, South Korea. He has made significant contributions to the field of substrate processing, particularly in methods that enhance the performance of photoresist patterns during ion implantation.

Latest Patents

Sang-Hak Yeo holds a patent for a "Method of processing substrate." This innovative method protects the photoresist pattern during the subsequent ion implanting process while improving conformal properties. The process involves disposing a substrate in a reaction chamber, where a photoresist pattern is formed. Additionally, it includes the formation of a CD control film made of nitrogen-doped amorphous carbon on the substrate. Notably, this step can be performed at a temperature of 100° C. or less using a PECVD process. He has 1 patent to his name.

Career Highlights

Sang-Hak Yeo is currently employed at Tes Co., Ltd., where he continues to develop and refine innovative technologies in substrate processing. His work has been instrumental in advancing the capabilities of semiconductor manufacturing.

Collaborations

He collaborates with talented coworkers, including Joo-Hyun Park and Jae-Ho Lee, who contribute to the innovative environment at Tes Co., Ltd.

Conclusion

Sang-Hak Yeo's contributions to substrate processing and his innovative patent demonstrate his commitment to advancing technology in the semiconductor industry. His work continues to influence the field positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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