The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2025

Filed:

Apr. 26, 2023
Applicant:

Tes Co., Ltd, Yongin-si, KR;

Inventors:

Joo-Hyun Park, Yongin-si, KR;

Sang-Hak Yeo, Yongin-si, KR;

Jae-Ho Lee, Yongin-si, KR;

Jae-Young Yang, Yongin-si, KR;

Kwan-Woo Lee, Yongin-si, KR;

Assignee:

TES CO., LTD, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); H01L 21/02115 (2013.01); H01L 21/266 (2013.01);
Abstract

There is provided a method of processing a substrate that protects the photoresist pattern during the subsequent ion implanting process as well as improve the conformal properties. The method of processing the substrate includes steps of disposing a substrate in a reaction chamber, the substrate on which a photoresist pattern is formed; and forming a CD control film including a nitrogen-doped amorphous carbon on the substrate on which the photoresist pattern is formed, and the step of forming the CD control film may be performed at a temperature of 100° C. or less by a PECVD process.


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