Yongin, South Korea

Jae-Young Yang

This inventor holds 1 USPTO granted patent. Top assignee: Tes Co., Ltd. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jae-Young Yang. Retrieved from https://idiyas.com/inventor/jae-young-yang-2s89pcgu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Jae-Young Yang: Innovator in Substrate Processing Technology

Introduction

Jae-Young Yang is a notable inventor based in Yongin-si, South Korea. He has made significant contributions to the field of substrate processing, particularly in methods that enhance the performance of photoresist patterns during ion implantation.

Latest Patents

Yang holds a patent for a "Method of processing substrate." This innovative method protects the photoresist pattern during the subsequent ion implanting process while improving conformal properties. The process involves disposing a substrate in a reaction chamber, where a photoresist pattern is formed. A key step includes forming a CD control film made of nitrogen-doped amorphous carbon on the substrate, which can be achieved at a temperature of 100° C. or less through a PECVD process. He has 1 patent to his name.

Career Highlights

Jae-Young Yang is currently employed at Tes Co., Ltd., where he continues to develop and refine his innovative techniques in substrate processing. His work has implications for various applications in the semiconductor industry.

Collaborations

Yang collaborates with talented colleagues, including Joo-Hyun Park and Sang-Hak Yeo, who contribute to the advancement of their projects and innovations.

Conclusion

Jae-Young Yang's contributions to substrate processing technology highlight his role as an influential inventor in the field. His innovative methods and collaborative efforts continue to drive advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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