Sang-Bin Ahn

Title: Innovations by Sang-Bin Ahn in Integrated Circuit Technology

Introduction

Sang-Bin Ahn is a notable inventor based in Incheon, South Korea. He has made significant contributions to the field of integrated circuit technology, holding a total of 2 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Sang-Bin Ahn's latest patents include innovations in integrated circuit devices that feature buried interconnect structures. These devices are designed to increase interconnect density, which is crucial for improving the performance of semiconductor substrates. The patents detail a semiconductor substrate with trench isolation regions that define active regions. The design includes a trench with opposing sidewalls, an electrical interconnect at the bottom, and an insulating capping pattern. Additionally, an interconnect insulating layer lines the trench, enhancing the device's functionality. The second patent further elaborates on the structure and functionality of semiconductor devices and modules, emphasizing the importance of electrical interconnects in orthogonal directions.

Career Highlights

Sang-Bin Ahn is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of integrated circuit design and innovation.

Collaborations

He has collaborated with notable coworkers, including Bong-Soo Kim and Kwang-youl Chun, contributing to advancements in semiconductor technology.

Conclusion

Sang-Bin Ahn's contributions to integrated circuit technology exemplify the innovative spirit of modern inventors. His patents reflect a commitment to enhancing semiconductor performance, which is vital for the advancement of electronic devices.