Beverly, MA, United States of America

Sandeep Mehta

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sandeep Mehta. Retrieved from https://idiyas.com/inventor/sandeep-mehta-aw4ro31p

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 26(Granted Patents)


Company Filing History:

goldMedal1 out of 834,513 
Other
 patents

Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Sandeep Mehta - Innovator in Ion Implantation Technology.

Introduction

Sandeep Mehta is a notable inventor based in Beverly, MA (US). He has made significant contributions to the field of ion implantation technology. His innovative approach has led to advancements that enhance the efficiency and longevity of ion sources.

Latest Patents

Sandeep holds a patent for a method titled "Ion implantation with improved ion source life expectancy." This invention focuses on increasing the lifetime of ion sources in ion implantation systems. The method involves introducing an inert gas, such as argon or xenon, into the halide-containing source gas. The inclusion of inert gas constituents has a cleansing effect in the plasma ambient by enhancing sputtering.

Career Highlights

Throughout his career, Sandeep has demonstrated a commitment to advancing technology in his field. His work has been recognized for its impact on improving ion implantation processes. With 1 patent to his name, he continues to push the boundaries of innovation.

Collaborations

Sandeep has collaborated with talented individuals such as Jinning Liu and Emi Ishida. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Sandeep Mehta's contributions to ion implantation technology exemplify the spirit of innovation. His work not only enhances the efficiency of ion sources but also sets a foundation for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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