The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2004
Filed:
Feb. 19, 1999
Applicant:
Inventors:
Che-Hoo Ng, San Martin, CA (US);
Emi Ishida, Sunnyvale, CA (US);
Jaime M. Reyes, Beverly, MA (US);
Jinning Liu, Danvers, MA (US);
Sandeep Mehta, Berverly, MA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 3/708 ;
U.S. Cl.
CPC ...
H01J 3/708 ;
Abstract
A method of increasing ion source lifetime in an ion implantation system uses the introduction of an inert gas, such as argon or xenon, into the halide-containing source gas. Inert gas constituents have a cleansing effect in the plasma ambient by enhancing sputtering.
Quick Actions:
Ng, Che-Hoo. (2004). Ion implantation with improved ion source life expectancy (U.S. Patent No. 6756600). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6756600
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