This inventor holds 3 USPTO granted patents. Top assignee: Ncr Corporation. Active years: 1983-1985.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- West Carrollton, OH (US) (1983)
- Fort Collins, CO (US) (1985)
Company Filing History:
Years Active: 1983-1985
Title: Innovations of Samuel Y Chiao
Introduction
Samuel Y Chiao is a notable inventor based in West Carrollton, Ohio, recognized for his contributions to semiconductor technology. He holds three patents that showcase his expertise in manufacturing methods for integrated circuits. His work has significantly impacted the field of electronics, particularly in the development of advanced gate structures.
Latest Patents
One of Samuel Y Chiao's latest patents is the "Oxide trench structure for polysilicon gates and interconnects." This patent discloses a manufacturing method for forming silicon gate, self-aligned MOS-type devices with submicron dimensions. The process involves forming a gate from a highly doped polysilicon layer using a mask, followed by low-temperature thermal oxidation. This method results in a thick oxide layer over the polysilicon gate sidewalls and a thinner oxide layer over the source-drain regions of the substrate. The patent also describes an alternative embodiment that includes lightly doped source-drain regions formed by ion implantation, enhancing the efficiency of the manufacturing process.
Another significant patent is the "Polysilicon-doped-first CMOS process." This invention outlines a process for creating self-aligned polysilicon gates and interconnecting conductors in CMOS integrated circuits. The method begins with a polysilicon layer over the gate oxide, which is then doped with n-type impurities. A thick oxide layer serves as an implantation mask, allowing for the formation of sources and drains in a self-aligned relationship with the corresponding gates.
Career Highlights
Samuel Y Chiao is currently employed at NCR Corporation, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of integrated circuits, making them more efficient and reliable.
Collaborations
Throughout his career, Samuel has collaborated with notable colleagues, including Ronald W Brower and Robert F Pfeifer. These partnerships have contributed to the successful development of his patented technologies.
Conclusion
Samuel Y Chiao's contributions to semiconductor technology through his innovative patents have made a significant impact on the industry. His work continues to influence the development of advanced electronic devices, showcasing the importance of innovation in technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
