This inventor holds 2 USPTO granted patents. Top assignees: Ict International Cmos Technology, Inc., National Semiconductor Corporation. Active years: 1985-1991.
Company Filing History:
1 out of 8 
1 out of 4,791 
Years Active: 1985-1991
Title: Innovations of Samuel T Wang
Introduction
Samuel T Wang is a notable inventor based in San Jose, California. He has made significant contributions to the field of non-volatile memory technology. With a total of two patents to his name, Wang's work has had a lasting impact on the industry.
Latest Patents
Wang's latest patents include the "Coplanar flash EPROM cell and method of making same." This invention involves the fabrication of a flash EPROM cell using a standard two polysilicon enhancement mode n-channel transistor process. The process begins with the formation of an active transistor region in a silicon substrate, surrounded by a field oxide. A first polysilicon layer is deposited, etched, and oxidized to create an insulated control gate electrode. A second polysilicon layer is then deposited over the active region and the control gate, which is subsequently anisotropically etched to leave a filament adjacent to the control gate. The cell structure can be either symmetrical or asymmetrical, depending on the configuration of the floating gate filament. The invention allows for higher gate-assisted avalanche breakdown in erasing the floating gate electrode, enhancing the performance of the memory cell.
Another significant patent is for a non-volatile memory cell, which is a static random access memory array cell. This cell retains its information even when power is lost, as the floating gate is charged or not charged based on the information content. Upon restoration of power, the cells are written to a positive state, recreating the information content of the array.
Career Highlights
Wang has worked with prominent companies in the semiconductor industry, including National Semiconductor Corporation and Ict International Cmos Technology, Inc. His experience in these organizations has contributed to his expertise in memory technology and semiconductor design.
Collaborations
Throughout his career, Wang has collaborated with esteemed colleagues such as Chenming Hu and Ying K Shum. These collaborations have further enriched his work and innovations in the field.
Conclusion
Samuel T Wang's contributions to the field of non-volatile memory technology through his patents and collaborations have established him as a significant figure in the industry. His innovative approaches continue to influence advancements in memory cell design and functionality.