Samir M Laymoun

Title: The Innovative Mind of Samir M Laymoun

Introduction

Samir M Laymoun is a notable inventor based in Sunnyvale, CA. He has made significant contributions to the field of memory cell technology, holding 2 patents that showcase his innovative approach to improving data storage solutions.

Latest Patents

Laymoun's latest patents include a "Memory cell with separate read and write paths and clamping transistors." This invention features two pairs of bit lines associated with each column of memory cells in a static random access memory (RAM). It allows for separate paths for reading and writing operations, enhancing the efficiency of RAM with dual read ports. The first pair of bit lines is connected to the emitters of cross-coupled transistors for write operations, while the second pair connects to the collectors of clamping transistors, which limit the collector voltage for reading data.

Another significant patent is the "Variable clamped memory cell." This improved memory cell circuit clamps the collector of the 'ON' transistor to a variable voltage level to prevent saturation. The design includes mechanisms to limit the voltage between a first node in the word line circuit and the collector of the conducting transistor, ensuring optimal performance.

Career Highlights

Throughout his career, Samir M Laymoun has worked with Fairchild Semiconductor Corporation, where he contributed to advancements in semiconductor technology. His work has been instrumental in developing innovative solutions that address the challenges in memory cell design.

Collaborations

Laymoun has collaborated with various professionals in the field, including his coworker Roger V Rufford. Their combined expertise has led to significant advancements in memory technology.

Conclusion

Samir M Laymoun's contributions to memory cell technology through his patents reflect his innovative spirit and dedication to improving data storage solutions. His work continues to influence the field and inspire future advancements.