This inventor holds 1 USPTO granted patent. Top assignee: Lam Research Corporation. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Innovations of Samantha Doan
Introduction
Samantha Doan is an accomplished inventor based in Pleasanton, California. She has made significant contributions to the field of memory structures through her innovative patent. Her work focuses on enhancing the electrical coupling of capacitors to active silicon regions, which is crucial for memory technology.
Latest Patents
Samantha holds a patent titled "Selective etching and deposition of memory layers to provide capacitor-to-active silicon electrical coupling." This patent describes a method that includes providing a substrate with a memory structure, performing deposition and etch cycles to modify dielectric layers, and executing breakthrough and over-etch operations to facilitate electrical coupling between capacitors and silicon regions. This innovative approach enhances the efficiency and performance of memory devices.
Career Highlights
Samantha is currently employed at Lam Research Corporation, where she applies her expertise in semiconductor technology. Her work at Lam Research has positioned her as a key player in advancing memory structure innovations. With her dedication and technical skills, she continues to contribute to the evolution of memory technologies.
Collaborations
Samantha collaborates with her coworker, Hui Gao, who shares her passion for innovation in the semiconductor field. Together, they work on projects that push the boundaries of memory technology and improve device performance.
Conclusion
Samantha Doan's contributions to the field of memory structures through her patent and work at Lam Research Corporation highlight her role as an influential inventor. Her innovative methods are paving the way for advancements in semiconductor technology.