Sam S Chu

Title: Innovations by Sam S. Chu in Memory Array Technology

Introduction

Sam S. Chu is a notable inventor based in San Jose, California. He has made significant contributions to the field of memory technology, holding three patents that focus on improving memory cell design and efficiency. His work is particularly relevant in the context of the growing demand for high-density memory solutions.

Latest Patents

Sam S. Chu's latest patents include a structure and method for improved memory arrays. This innovation reduces memory cell size by forming self-formed contacts and self-aligned source lines within the array. In one embodiment, a plurality of self-aligned memory cells are created, followed by the deposition of a first insulating layer, which is then etched to form spacers on the sidewalls of each memory cell. Conductive plugs are formed between adjacent spacers, and a second insulating layer is deposited over the array. Drain contacts are established through the second insulating layer to a first set of plugs, while other plugs form source lines for the array. This self-formed contact design allows for significant size reduction of the contact pitch and enhances isolation for each memory cell. The innovation also reduces source line resistance, increasing cell efficiency and performance.

Career Highlights

Sam S. Chu is currently employed at Catalyst Semiconductor, Inc., where he continues to develop cutting-edge memory technologies. His work has been instrumental in advancing the capabilities of memory arrays, making them more efficient and compact.

Collaborations

One of his notable coworkers is Calvin V. Ho, with whom he collaborates on various projects related to memory technology.

Conclusion

Sam S. Chu's contributions to memory array technology exemplify the innovative spirit of modern inventors. His patents not only enhance the performance of memory cells but also pave the way for the development of ultra-high density memory solutions.