Suwon, South Korea

Sam Hyung Sam Kim

This inventor holds 1 USPTO granted patent. Top assignees: Leland Stanford Junior University, Samsung Electronics Co., Ltd.. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sam Hyung Sam Kim. Retrieved from https://idiyas.com/inventor/sam-hyung-sam-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Sam Hyung Sam Kim: Innovator in Semiconductor Technology

Introduction

Sam Hyung Sam Kim is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for forming thin films.

Latest Patents

Sam Hyung Sam Kim holds a patent for a method of forming a thin film of a semiconductor device. This method involves several steps, including the formation of a precursor layer on a substrate, the use of a purge gas to discharge remaining gases, and the generation of plasma to facilitate chemical reactions. The process also incorporates the use of extreme ultraviolet (EUV) light to enhance the thin film formation.

Career Highlights

Throughout his career, Sam Hyung Sam Kim has worked with prominent organizations, including Samsung Electronics Co., Ltd. and Leland Stanford Junior University. His experience in these institutions has allowed him to develop and refine his innovative techniques in semiconductor manufacturing.

Collaborations

Some of his notable coworkers include Andrei Teodor Iancu and Friedrich B Prinz. Their collaborative efforts have contributed to advancements in the semiconductor field.

Conclusion

Sam Hyung Sam Kim's work in semiconductor technology exemplifies the innovative spirit of modern inventors. His contributions continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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