The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Aug. 14, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Sam Hyung Sam Kim, Suwon-si, KR;
Andrei Teodor Iancu, Stanford, CA (US);
Friedrich B. Prinz, Palo Alto, CA (US);
Michael C. Langston, Stanford, CA (US);
Peter Schindler, Stanford, CA (US);
Ki-Hyun Kim, Yongin-si, KR;
Stephen P. Walch, Palo Alto, CA (US);
Takane Usui, Stanford, CA (US);
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
Provided is a method of forming a thin film of a semiconductor device. The method includes forming a precursor layer on a surface of a substrate by supplying a precursor gas into a chamber, discharging the precursor gas remaining in the chamber to an outside of the chamber by supplying a purge gas into the chamber, supplying a reactant gas into the chamber, generating plasma based on the reactant gas, forming a thin film by a chemical reaction between plasma and the precursor layer and radiating extreme ultraviolet (EUV) light into the chamber, and discharging the reactant gas and the plasma remaining in the chamber by supplying a purge gas into the chamber.