Hatoyama-machi, Japan

Sakiko Yasuhara


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 101(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Sakiko Yasuhara: Innovator in Tantalum Compounds

Introduction

Sakiko Yasuhara is a notable inventor based in Hatoyama-machi, Japan. She has made significant contributions to the field of materials science, particularly in the development of tantalum compounds for use in semiconductor manufacturing.

Latest Patents

Yasuhara holds a patent for "Tantalum Tertiary Amylimido Tris (Dimethylamide), A Process for Producing the Same, A Solution of Starting Material for MOCVD Using the Same, and A Method of Forming a Tantalum Nitride Film Using the Same." This innovative compound provides a stable starting material for forming tantalum nitride (TaN) films, which are essential as barrier films in various applications. The compound has a vapor pressure of 1 Torr at 80°C and a melting point of 36°C. The production process involves a reaction between tantalum chloride and lithium compounds in an organic solvent, followed by separation and distillation.

Career Highlights

Yasuhara is associated with Kabushikikaisha Kojundokagaku Kenkyusho, where she has been instrumental in advancing research in tantalum compounds. Her work has implications for improving the efficiency and reliability of semiconductor devices.

Collaborations

Yasuhara collaborates with Hidekimi Kadokura, who is also a prominent figure in the field. Their partnership has fostered innovation and development in tantalum-based materials.

Conclusion

Sakiko Yasuhara's contributions to the field of materials science, particularly through her patent on tantalum compounds, highlight her role as an innovator. Her work continues to influence advancements in semiconductor technology.

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