Kabushikikaisha Kojundokagaku Kenkyusho

Sakiko Yasuhara

Hidekimi Kadokura

A stable compound having a vapor pressure higher by 1 order than that of Ta(NtBu)(NEt ) is provided as a starting material for forming a TaN film as a barrier film by the CVD method. There are further provided a process for producing the same and a method of forming a TaN film by using the same. The novel compound, tantalum tertiary amylimido tris(dimethylamide) &lsqb;Ta(NtAm)(NMe ) &rsqb; has a vapor pressure of 1 Torr at 80&deg; C., and its melting point is 36&deg; C. This compound is obtained by allowing 1 mole of TaCl , 4 moles of LiNMe and 1 mole of LiNHtAm to react with one another in an organic solvent in the vicinity of room temperature, then separating byproducts by filtration, distilling the solvent away, and distilling the product in vacuo. This compound can be used as a starting material in CVD to form a cubic TaN film on a SiO /Si substrate at 550&deg; C. at 0.05 Torr.

TANTALUM TERTIARY AMYLIMIDO TRIS (DIMETHYLAMIDE), A PROCESS FOR PRODUCING THE SAME, A SOLUTION OF STARTING MATERIAL FOR MOCVD USING THE SAME, AND A METHOD OF FORMING A TANTALUM NITRIDE FILM USING THE SAME

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Hatoyama-machi, Japan

Sakiko Yasuhara