The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Nov. 09, 2001
Sakiko Yasuhara, Hatoyama-machi, JP;
Hidekimi Kadokura, Tokyo, JP;
Kabushikikaisha Kojundokagaku Kenkyusho, Saitama, JP;
Abstract
A stable compound having a vapor pressure higher by 1 order than that of Ta(NtBu)(NEt ) is provided as a starting material for forming a TaN film as a barrier film by the CVD method. There are further provided a process for producing the same and a method of forming a TaN film by using the same. The novel compound, tantalum tertiary amylimido tris(dimethylamide) [Ta(NtAm)(NMe ) ] has a vapor pressure of 1 Torr at 80° C., and its melting point is 36° C. This compound is obtained by allowing 1 mole of TaCl , 4 moles of LiNMe and 1 mole of LiNHtAm to react with one another in an organic solvent in the vicinity of room temperature, then separating byproducts by filtration, distilling the solvent away, and distilling the product in vacuo. This compound can be used as a starting material in CVD to form a cubic TaN film on a SiO /Si substrate at 550° C. at 0.05 Torr.