This inventor holds 2 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1998-2000.
Company Filing History:
Years Active: 1998-2000
Title: Sakae Funo: Innovator in Semiconductor Technology
Introduction
Sakae Funo is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.
Latest Patents
Funo's latest patents include a semiconductor device featuring an insulation film with a specific breakdown voltage. In this innovation, impurity diffusion layers are formed in a silicon substrate, serving as source and drain regions that are separated from each other. A gate insulation film, which is a silicon oxide film containing chlorine at a concentration between 1.times.10.sup.18 atoms/cm³ and 2.times.10.sup.20 atoms/cm³, is formed on the silicon substrate using low-pressure chemical vapor deposition (CVD). A polysilicon layer serves as the gate electrode, and an inter-level insulation film is created on the resultant structure. Contact holes are formed on each of the source and drain regions, allowing for the connection of drain and source electrodes through these holes.
Career Highlights
Sakae Funo is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to contribute to advancements in semiconductor technology, which are crucial for various electronic applications.
Collaborations
Funo has collaborated with notable coworkers, including Yuuichi Mikata and Katsunori Ishihara. Their combined expertise has fostered innovation and development in their projects.
Conclusion
Sakae Funo's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the industry positively.