This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Kioxia Corporation. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: Saho Ohsawa: Innovator in Semiconductor Technology
Introduction
Saho Ohsawa is a prominent inventor based in Yokkaichi, Japan. She has made significant contributions to the field of semiconductor technology, particularly through her innovative designs and methods.
Latest Patents
Ohsawa holds a patent for a semiconductor memory device and the method for manufacturing it. This semiconductor memory device includes a semiconductor layer that extends in a first direction, a gate electrode layer made from elements such as molybdenum, tungsten, ruthenium, and cobalt, and multiple insulating layers that enhance its functionality. The design also incorporates a charge storage layer and a metal oxide layer containing elements like titanium, molybdenum, tungsten, and tantalum.
Career Highlights
Saho Ohsawa is currently employed at Kioxia Corporation, where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in advancing memory device capabilities, making her a key figure in the industry.
Collaborations
Ohsawa collaborates with notable colleagues, including Kenichi Fujii and Takashi Fukushima, to further enhance the development of innovative semiconductor solutions.
Conclusion
Saho Ohsawa's contributions to semiconductor technology exemplify her dedication and expertise in the field. Her innovative patent and ongoing work at Kioxia Corporation highlight her role as a leading inventor in the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
