Yokkaichi, Japan

Saho Ohsawa

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Kioxia Corporation. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Saho Ohsawa. Retrieved from https://idiyas.com/inventor/saho-ohsawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Saho Ohsawa: Innovator in Semiconductor Technology

Introduction

Saho Ohsawa is a prominent inventor based in Yokkaichi, Japan. She has made significant contributions to the field of semiconductor technology, particularly through her innovative designs and methods.

Latest Patents

Ohsawa holds a patent for a semiconductor memory device and the method for manufacturing it. This semiconductor memory device includes a semiconductor layer that extends in a first direction, a gate electrode layer made from elements such as molybdenum, tungsten, ruthenium, and cobalt, and multiple insulating layers that enhance its functionality. The design also incorporates a charge storage layer and a metal oxide layer containing elements like titanium, molybdenum, tungsten, and tantalum.

Career Highlights

Saho Ohsawa is currently employed at Kioxia Corporation, where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in advancing memory device capabilities, making her a key figure in the industry.

Collaborations

Ohsawa collaborates with notable colleagues, including Kenichi Fujii and Takashi Fukushima, to further enhance the development of innovative semiconductor solutions.

Conclusion

Saho Ohsawa's contributions to semiconductor technology exemplify her dedication and expertise in the field. Her innovative patent and ongoing work at Kioxia Corporation highlight her role as a leading inventor in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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