The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Jun. 09, 2022
Kioxia Corporation, Tokyo, JP;
Saho Ohsawa, Yokkaichi, JP;
Kenichi Fujii, Yokkaichi, JP;
Takashi Fukushima, Yokkaichi, JP;
Hiroyuki Ohtori, Yokkaichi, JP;
Kaihei Katou, Yokkaichi, JP;
Masaki Kato, Yokkaichi, JP;
Ryosuke Sawabe, Yokkaichi, JP;
Yuji Sakai, Yokkaichi, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor memory device of an embodiment includes: a semiconductor layer extending in a first direction; a gate electrode layer containing at least one element selected from a group consisting of molybdenum (Mo), tungsten (W), ruthenium (Ru), and cobalt (Co); a first insulating layer provided between the semiconductor layer and the gate electrode layer; a charge storage layer provided between the first insulating layer and the gate electrode layer; a second insulating layer provided between the charge storage layer and the gate electrode layer; a third insulating layer provided between the second insulating layer and the gate electrode layer; and a metal oxide layer provided between the third insulating layer and the gate electrode layer and containing at least one first metal element selected from a group consisting of titanium (Ti), molybdenum (Mo), tungsten (W), and tantalum (Ta).