Yokkaichi, Japan

Kenichi Fujii

This inventor holds 1 USPTO granted patent. Top assignee: Kioxia Corporation. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kenichi Fujii. Retrieved from https://idiyas.com/inventor/kenichi-fujii-jdconkkv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Kenichi Fujii: Innovator in Semiconductor Technology

Introduction

Kenichi Fujii is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative designs and methods.

Latest Patents

Fujii holds a patent for a semiconductor memory device and the method for manufacturing it. This semiconductor memory device includes a semiconductor layer that extends in a first direction, a gate electrode layer made from elements such as molybdenum, tungsten, ruthenium, and cobalt, and multiple insulating layers that enhance its functionality. The design also incorporates a charge storage layer and a metal oxide layer containing elements like titanium, molybdenum, tungsten, and tantalum.

Career Highlights

Kenichi Fujii is associated with Kioxia Corporation, where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of more efficient and reliable memory devices, which are crucial for modern electronic applications.

Collaborations

Fujii has collaborated with notable colleagues, including Saho Ohsawa and Takashi Fukushima, to further enhance the innovations in semiconductor technology.

Conclusion

Kenichi Fujii's contributions to semiconductor technology through his patent and work at Kioxia Corporation highlight his role as a key innovator in the field. His advancements continue to influence the development of memory devices in the electronics industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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