This inventor holds 4 USPTO granted patents. Top assignees: Atmel Corporation, Stmicroelectronics S.r.l.. Active years: 2001-2004.
Location History:
- Cirimido, IT (2001)
- Monza, IT (2004)
Company Filing History:
Years Active: 2001-2004
Title: The Innovative Contributions of Sabina Mognoni
Introduction
Sabina Mognoni is a prominent inventor based in Monza, Italy. She has made significant contributions to the field of non-volatile memory technology, holding a total of 4 patents. Her work focuses on improving the efficiency and functionality of memory cells, which are crucial in modern electronic devices.
Latest Patents
Mognoni's latest patents include a regulation method for the drain, body, and source terminals voltages in a non-volatile memory cell during a program phase. This method involves a program-load circuit that regulates the voltages applied to the memory cell, addressing the challenges posed by parasitic resistors in the conduction pattern. Another notable patent is for a flash memory architecture with page mode erase using an NMOS and PMOS row decoding scheme. This innovative design partitions the flash memory into sections, allowing for efficient page erasure while protecting unselected rows from unwanted erasure.
Career Highlights
Throughout her career, Sabina Mognoni has worked with leading companies in the technology sector, including Atmel Corporation and STMicroelectronics S.r.l. Her experience in these organizations has allowed her to develop and refine her expertise in memory technology.
Collaborations
Mognoni has collaborated with notable professionals in her field, including Rino Micheloni and Andrea Sacco. These partnerships have contributed to her success and the advancement of her innovative projects.
Conclusion
Sabina Mognoni's contributions to non-volatile memory technology exemplify her dedication to innovation and excellence. Her patents reflect her commitment to enhancing the performance of memory cells, making her a significant figure in the field of electronics.